TK12A60 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
POWER MOSFET, N CHANNEL, 600 V, 12 A, 0.45 OHM, SC-67, THROUGH HOLE
| Part | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) | Technology | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 600 V | N-Channel | 45 W | MOSFET (Metal Oxide) | Through Hole | 38 nC | 550 mOhm | 12 A | 10 V | TO-220SIS | 30 V | 1800 pF | 150 °C | TO-220-3 Full Pack | |||
 Toshiba Semiconductor and Storage | 600 V | N-Channel | 35 W | MOSFET (Metal Oxide) | Through Hole | 11.5 A | 10 V | TO-220SIS | 30 V | 890 pF | 150 °C | TO-220-3 Full Pack | 300 mOhm | 3.7 V | 25 nC |