Specification	NX6008NBKSX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	220 mA
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	27 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max	260 mW, 1.3 W
Rds On (Max) @ Id, Vgs	2.7 Ohm
Supplier Device Package	6-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV

NX6008NBKS Series

60 V, dual N-channel Trench MOSFET

Part	Drain to Source Voltage (Vdss)	Power - Max	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Configuration	Technology	Mounting Type
Nexperia USA Inc. NX6008NBKSX	60 V	1.3 W 260 mW	2.7 Ohm	0.7 nC	27 pF	220 mA	6-TSSOP	6-TSSOP SC-88 SOT-363	150 °C	-55 °C	900 mV	2 N-Channel (Dual)	MOSFET (Metal Oxide)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	16076	$ 0.35

Description

General part information

NX6008NBKS Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.