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60 V, dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, dual N-channel Trench MOSFET
60 V, dual N-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Power - Max | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Configuration | Technology | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 60 V | 1.3 W 260 mW | 2.7 Ohm | 0.7 nC | 27 pF | 220 mA | 6-TSSOP | 6-TSSOP SC-88 SOT-363 | 150 °C | -55 °C | 900 mV | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Surface Mount |