Specification	HN1A01FU-GR,LF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Supplier Device Package	US6
Transistor Type	2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

HN1A01FU Series

Bipolar Transistors, PNP + PNP Bipolar Transistor, -50 V, -0.15 A, SOT-363(US6)

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Mounting Type	Grade	Supplier Device Package	Qualification	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Power - Max [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage HN1A01FU-GR,LXHF	50 V	150 mA	2 PNP	Surface Mount	Automotive	US6	AEC-Q101	100 nA	200 hFE	6-TSSOP SC-88 SOT-363	200 mW
Toshiba Semiconductor and Storage HN1A01FU-GR,LF	50 V	150 mA	2 PNP (Dual)	Surface Mount		US6		100 nA	200 hFE	6-TSSOP SC-88 SOT-363	200 mW	125 ¯C
Toshiba Semiconductor and Storage HN1A01FU-Y,LF	50 V	150 mA	2 PNP (Dual)	Surface Mount		US6		100 nA		6-TSSOP SC-88 SOT-363	200 mW	125 ¯C	120
Toshiba Semiconductor and Storage HN1A01FU-Y,LXHF	50 V	150 mA	2 PNP (Dual)	Surface Mount	Automotive	US6	AEC-Q101	100 nA		6-TSSOP SC-88 SOT-363	200 mW		120

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1518	$ 0.23

General part information

Bipolar Transistors, PNP + PNP Bipolar Transistor, -50 V, -0.15 A, SOT-363(US6)

Technical documentation and resources