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RN2901 - Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-363(US6)
Discrete Semiconductor Products

HN1A01FU-Y,LF

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, PNP + PNP BIPOLAR TRANSISTOR, -50 V, -0.15 A, SOT-363(US6)

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RN2901 - Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-363(US6)
Discrete Semiconductor Products

HN1A01FU-Y,LF

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, PNP + PNP BIPOLAR TRANSISTOR, -50 V, -0.15 A, SOT-363(US6)

Technical Specifications

Parameters and characteristics for this part

SpecificationHN1A01FU-Y,LF
Current - Collector (Ic) (Max) [Max]150 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Mounting TypeSurface Mount
Operating Temperature125 ¯C
Package / CaseSOT-363, SC-88, 6-TSSOP
Power - Max [Max]200 mW
Supplier Device PackageUS6
Transistor Type2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 0.04
DigikeyN/A 3119$ 0.23

Description

General part information

HN1A01FU Series

Bipolar Transistors, PNP + PNP Bipolar Transistor, -50 V, -0.15 A, SOT-363(US6)