Discrete Semiconductor Products

PSMN9R1-30YL,115

NRND

MOSFET N-CH 30V 57A LFPAK56

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 57A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN9R1-30YL,115

Current - Continuous Drain (Id) @ 25°C	57 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.7 nC
Input Capacitance (Ciss) (Max) @ Vds	894 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs [Max]	9.1 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP PSMN9R1-30YL,115	57 A	N-Channel	2.15 V	9.1 mOhm	52 W	4.5 V 10 V	-55 °C	175 ░C	894 pF	LFPAK56 Power-SO8	20 V	MOSFET (Metal Oxide)	SC-100 SOT-669	16.7 nC	Surface Mount	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 57A (Tc) 52W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources