PSMN9R1 Series
N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK
Manufacturer: Nexperia USA Inc.
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N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK
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N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK
N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK
N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK
| Part | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Package / Case | Technology | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Vgs(th) (Max) | Vgs (Max) | Rds On (Max) | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 16.7 nC | 30 V | SC-100 SOT-669 | MOSFET (Metal Oxide) | -55 °C | 175 °C | N-Channel | 2.15 V | 20 V | 9.1 mOhm | LFPAK56 Power-SO8 | 10 V | 4.5 V | Surface Mount | 894 pF | 57 A | 52 W |