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MULTICOMP PRO MUR1660CT
Discrete Semiconductor Products

STGP5H60DF

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 5 A HIGH SPEED

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MULTICOMP PRO MUR1660CT
Discrete Semiconductor Products

STGP5H60DF

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 5 A HIGH SPEED

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGP5H60DF
Current - Collector Pulsed (Icm)20 A
Gate Charge43 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power - Max [Max]88 W
Reverse Recovery Time (trr)134.5 ns
Supplier Device PackageTO-220
Switching Energy56 µJ, 78.5 µJ
Td (on/off) @ 25°C140 ns, 30 ns
Test Condition5 A, 15 V, 47 Ohm, 400 V
Vce(on) (Max) @ Vge, Ic1.95 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1944$ 1.96
NewarkEach 1$ 2.27
10$ 1.74
100$ 1.22
500$ 1.03
1000$ 0.98
3000$ 0.93
10000$ 0.87

Description

General part information

STGP5H60DF Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.