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TO-220-3
Discrete Semiconductor Products

AFGB30T65SQDN

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ON Semiconductor

IGBT 650V FS4 HIGH SPEED VERSION FOR OBC APPLICATION IN D2PAK

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TO-220-3
Discrete Semiconductor Products

AFGB30T65SQDN

Active
ON Semiconductor

IGBT 650V FS4 HIGH SPEED VERSION FOR OBC APPLICATION IN D2PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationAFGB30T65SQDN
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge56 nC
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]220 W
QualificationAEC-Q101
Reverse Recovery Time (trr)245 ns
Supplier Device PackageTO-263 (D2PAK)
Td (on/off) @ 25°C14.5 ns
Td (on/off) @ 25°C63.2 ns
Test Condition400 V, 30 A, 6 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.53
10$ 3.80
100$ 3.08
Digi-Reel® 1$ 4.53
10$ 3.80
100$ 3.08
Tape & Reel (TR) 800$ 2.13
1600$ 2.12
NewarkEach (Supplied on Full Reel) 1$ 2.66
3000$ 2.54
6000$ 2.37
12000$ 2.20
18000$ 2.12
30000$ 2.09
ON SemiconductorN/A 1$ 2.26

Description

General part information

AFGB30T65SQDN Series

Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB30T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.