AFGB30T65SQDN Series

IGBT 650V FS4 High speed version for OBC application in D2PAK

Catalog

IGBT 650V FS4 High speed version for OBC application in D2PAK

Part	Vce(on) (Max) @ Vge, Ic	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Qualification	Grade	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Gate Charge	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor AFGB30T65SQDN	2.1 V	Surface Mount	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	14.5 ns	63.2 ns	120 A	245 ns	AEC-Q101	Automotive	220 W	60 A	TO-263 (D2PAK)	56 nC	6 Ohm 15 V 30 A 400 V	-55 °C	175 ░C

Catalog

IGBT 650V FS4 High speed version for OBC application in D2PAK

Key Features

• AEC-Q101 Qualified

• VCE(sat) = 1.6 V (typ.) @ IC = 30 A

• Low VF soft recovery co-packaged diode

Description

Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB30T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.