Discrete Semiconductor Products
STL4N10F7
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.062 OHM TYP., 4.5 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE
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Discrete Semiconductor Products
STL4N10F7
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.062 OHM TYP., 4.5 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STL4N10F7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5 A, 18 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 7.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 408 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 2.9 W, 50 W |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | PowerFlat™ (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL4N10F7 Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources