STGB30H65DFB2
ActiveTRENCH GATE FIELD-STOP 650 V, 30 A HIGH SPEED HB2 SERIES IGBT IN A D2PAK PACKAGE
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STGB30H65DFB2
ActiveTRENCH GATE FIELD-STOP 650 V, 30 A HIGH SPEED HB2 SERIES IGBT IN A D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGB30H65DFB2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 50 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Gate Charge | 90 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263AA, D2PAK (3 Leads + Tab), TO-263-4 |
| Power - Max [Max] | 167 W |
| Reverse Recovery Time (trr) | 115 ns |
| Supplier Device Package | D2PAK-3 |
| Switching Energy | 310 µJ, 270 µJ |
| Td (on/off) @ 25°C | 18.4 ns |
| Td (on/off) @ 25°C | 71 ns |
| Test Condition | 30 A, 15 V, 6.8 Ohm, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB30H65DFB2 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Documents
Technical documentation and resources