Discrete Semiconductor Products

BUJ100LR,412

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BIPOLAR TRANSISTORS - BJT TRANS GP BJT NPN 400V 1A 3-PIN

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT TRANS GP BJT NPN 400V 1A 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUJ100LR,412

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	2.1 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

Part	Package / Case	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Package / Case
WeEn Semiconductors BUJ100LR,126	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	10	150 °C	Through Hole	2.1 W	1 mA	1 A	400 V	1.5 V	TO-92-3
WeEn Semiconductors BUJ100,412	TO-226-3 TO-92-3	NPN	9	150 °C	Through Hole	2 W	100 µA	1 A	400 V	1 V	TO-92-3	TO-226AA
WeEn Semiconductors BUJ100,126	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	9	150 °C	Through Hole	2 W	100 µA	1 A	400 V	1 V	TO-92-3
WeEn Semiconductors BUJ100LR,412	TO-226-3 TO-92-3	NPN	10	150 °C	Through Hole	2.1 W	1 mA	1 A	400 V	1.5 V	TO-92-3	TO-226AA

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General part information

Bipolar (BJT) Transistor NPN 400 V 1 A 2.1 W Through Hole TO-92-3

Technical documentation and resources

No documents available