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TO-262-3
Discrete Semiconductor Products

IRF5210LPBF

Obsolete
INFINEON

IR MOSFET™ P-CHANNEL ; I2PAK TO-262 PACKAGE; 60 MOHM;

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TO-262-3
Discrete Semiconductor Products

IRF5210LPBF

Obsolete
INFINEON

IR MOSFET™ P-CHANNEL ; I2PAK TO-262 PACKAGE; 60 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF5210LPBF
Current - Continuous Drain (Id) @ 25°C38 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]230 nC
Input Capacitance (Ciss) (Max) @ Vds2780 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)3.1 W, 170 W
Rds On (Max) @ Id, Vgs60 mOhm
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IRF5210 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources