IRF5210 Series

Manufacturer: INFINEON

Catalog

POWER MOSFET, HEXFET, P CHANNEL, 100 V, 38 A, 0.06 OHM, TO-263 (D2PAK), SURFACE MOUNT

Part	FET Type	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
INFINEON IRF5210STRLPBF	P-Channel	100 V	MOSFET (Metal Oxide)	60 mOhm	150 °C	-55 °C	Surface Mount	D2PAK	230 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2780 pF	38 A	20 V	3.1 W 170 W	10 V	4 V
INFINEON IRF5210STRRPBF	P-Channel	100 V	MOSFET (Metal Oxide)	60 mOhm	150 °C	-55 °C	Surface Mount	D2PAK	230 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2780 pF	38 A	20 V	3.1 W 170 W	10 V	4 V
INFINEON IRF5210LPBF	P-Channel	100 V	MOSFET (Metal Oxide)	60 mOhm	150 °C	-55 °C	Through Hole	TO-262	230 nC	I2PAK TO-262-3 Long Leads TO-262AA	2780 pF	38 A	20 V	3.1 W 170 W	10 V	4 V