Discrete Semiconductor Products
BUL743
ActiveSTMicroelectronics
TRANS GP BJT NPN 500V 12A 100000MW 3-PIN(3+TAB) TO-220AB TUBE
Discrete Semiconductor Products
BUL743
ActiveSTMicroelectronics
TRANS GP BJT NPN 500V 12A 100000MW 3-PIN(3+TAB) TO-220AB TUBE
Technical Specifications
Parameters and characteristics for this part
| Specification | BUL743 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| Current - Collector Cutoff (Max) [Max] | 250 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 24 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 100 W |
| Supplier Device Package | TO-220 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 500 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BUL743 Series
The device is manufactured using the diffused collector in planar technology adopting new and enhanced high voltage structure. It has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
Documents
Technical documentation and resources