Discrete Semiconductor Products

KSC1173YTSTU

Obsolete

TRANS NPN 30V 3A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 30V 3A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSC1173YTSTU

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120 hFE
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	10 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

NPN Epitaxial Silicon Bipolar Junction Transistor (BJT)

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Operating Temperature	Power - Max [Max]	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor KSC1173YTSTU	TO-220-3	30 V	Through Hole	800 mV	1 µA	100 MHz	150 °C	10 W	NPN	TO-220-3	120 hFE	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Bipolar Junction Transistor (BJT)

Technical documentation and resources