Catalog
NPN Epitaxial Silicon Bipolar Junction Transistor (BJT)
Key Features
• Collector Current: IC=3A
• Collector Dissipation: PC=10W (TC=25°C)
• Complement to KSA473Low Frequency Power Amplifier Power Regulator
Beta
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NPN Epitaxial Silicon Bipolar Junction Transistor (BJT)
NPN Epitaxial Silicon Bipolar Junction Transistor (BJT)
| Part | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Mounting Type | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Operating Temperature | Power - Max [Max] | Transistor Type | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | TO-220-3 | 30 V | Through Hole | 800 mV | 1 µA | 100 MHz | 150 °C | 10 W | NPN | TO-220-3 | 120 hFE | 3 A |