Integrated Circuits (ICs)

MT42L32M32D1HE-18 AUT:D

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Micron Technology Inc.

DRAM, LPDDR2, 1 GBIT, 32M X 32BIT, 533 MHZ, VFBGA, 134 PINS

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Integrated Circuits (ICs)

MT42L32M32D1HE-18 AUT:D

Active

Micron Technology Inc.

DRAM, LPDDR2, 1 GBIT, 32M X 32BIT, 533 MHZ, VFBGA, 134 PINS

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT42L32M32D1HE-18 AUT:D

Clock Frequency	533 MHz
Grade	Automotive
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	32 M
Memory Size	1 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	134-VFBGA
Qualification	AEC-Q100
Supplier Device Package	134-VFBGA (10x11.5)
Technology	SDRAM - Mobile LPDDR2
Voltage - Supply [Max]	1.3 V
Voltage - Supply [Min]	1.14 V
Write Cycle Time - Word, Page	15 ns

MT42L32M32 Series

Part	Memory Format	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Memory Type	Mounting Type	Grade	Write Cycle Time - Word, Page	Qualification	Voltage - Supply [Max]	Voltage - Supply [Min]	Technology	Package / Case	Memory Interface	Memory Organization	Clock Frequency	Supplier Device Package
Micron Technology Inc. MT42L32M32D1HE-18 IT:D	DRAM	85 °C	-40 °C	1 Mbit	Volatile	Surface Mount	Automotive	15 ns	AEC-Q100	1.3 V	1.14 V	SDRAM - Mobile LPDDR2	134-VFBGA	Parallel	32 M	533 MHz	134-VFBGA (10x11.5)
Micron Technology Inc. MT42L32M32D2AC-25 AAT:A	DRAM	105 °C	-40 °C	1 Mbit	Volatile	Surface Mount	Automotive		AEC-Q100	1.95 V	1.14 V	SDRAM - Mobile LPDDR2	134-VFBGA	Parallel	32 M	400 MHz	134-FBGA (10x11.5)
Micron Technology Inc. MT42L32M32D1HE-18 AUT:D TR	DRAM	125 °C	-40 °C	1 Mbit	Volatile	Surface Mount	Automotive	15 ns	AEC-Q100	1.3 V	1.14 V	SDRAM - Mobile LPDDR2	134-VFBGA	Parallel	32 M	533 MHz	134-VFBGA (10x11.5)
Micron Technology Inc. MT42L32M32D1HE-18 AAT:D	DRAM	105 °C	-40 °C	1 Mbit	Volatile	Surface Mount	Automotive	15 ns	AEC-Q100	1.3 V	1.14 V	SDRAM - Mobile LPDDR2	134-VFBGA	Parallel	32 M	533 MHz	134-VFBGA (10x11.5)
Micron Technology Inc. MT42L32M32D1HE-18 AUT:D	DRAM	125 °C	-40 °C	1 Mbit	Volatile	Surface Mount	Automotive	15 ns	AEC-Q100	1.3 V	1.14 V	SDRAM - Mobile LPDDR2	134-VFBGA	Parallel	32 M	533 MHz	134-VFBGA (10x11.5)
Micron Technology Inc. MT42L32M32D2AC-25 AIT:A TR	DRAM	85 °C	-25 °C	1 Mbit	Volatile	Surface Mount	Automotive		AEC-Q100	1.95 V	1.14 V	SDRAM - Mobile LPDDR2	134-VFBGA	Parallel	32 M	400 MHz	134-FBGA (10x11.5)
Micron Technology Inc. MT42L32M32D1HE-18 AAT:D TR	DRAM	105 °C	-40 °C	1 Mbit	Volatile	Surface Mount	Automotive	15 ns	AEC-Q100	1.3 V	1.14 V	SDRAM - Mobile LPDDR2	134-VFBGA	Parallel	32 M	533 MHz	134-VFBGA (10x11.5)
Micron Technology Inc. MT42L32M32D2AC-25 FAAT:A	DRAM	105 °C	-40 °C	1 Mbit	Volatile	Surface Mount				1.95 V	1.14 V	SDRAM - Mobile LPDDR2	134-VFBGA	Parallel	32 M	400 MHz	134-VFBGA (10x11.5)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 6.35
	Tray	1520	$ 6.93

Description

General part information

MT42L32M32 Series

MT42L32M32D1HE-18 AUT:D is a LPDDR2 SDRAM. It is a 1Gb mobile low-power DDR2 SDRAM (LPDDR2) and high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. This memory is internally configured as an eight-bank DRAM. Each of the x16’s 134,217,728-bit banks are organized as 8192 rows by 1024 columns by 16 bits. Each of the x32’s 134,217,728-bit banks are organized as 8192 rows by 512 columns by 32 bits. It has multiplexed, double data rate, command/address inputs; commands entered on every CK edge. It has bidirectional/differential data strobe per byte of data (DQS/DQS#), programmable READ and WRITE latencies (RL/WL).

Documents

Technical documentation and resources

No documents available