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MT42L32M32D1HE-18 IT:D
Integrated Circuits (ICs)

MT42L32M32D1HE-18 IT:D

Active
Micron Technology Inc.

DRAM CHIP MOBILE LPDDR2 SDRAM 1GBIT 32M X 32 1.2V 134-PIN FBGA

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MT42L32M32D1HE-18 IT:D
Integrated Circuits (ICs)

MT42L32M32D1HE-18 IT:D

Active
Micron Technology Inc.

DRAM CHIP MOBILE LPDDR2 SDRAM 1GBIT 32M X 32 1.2V 134-PIN FBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMT42L32M32D1HE-18 IT:D
Clock Frequency533 MHz
GradeAutomotive
Memory FormatDRAM
Memory InterfaceParallel
Memory Organization32 M
Memory Size1 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case134-VFBGA
QualificationAEC-Q100
Supplier Device Package134-VFBGA (10x11.5)
TechnologySDRAM - Mobile LPDDR2
Voltage - Supply [Max]1.3 V
Voltage - Supply [Min]1.14 V
Write Cycle Time - Word, Page15 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 414$ 7.55
Tray 1$ 7.53
10$ 6.93
25$ 6.78
40$ 6.76
80$ 6.07
230$ 5.88
440$ 5.59
1520$ 5.40

Description

General part information

MT42L32M32 Series

MT42L32M32D1HE-18 IT:D is a mobile LPDDR2 SDRAM. It is a 1Gb mobile low-power DDR2 SDRAM (LPDDR2) and high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. This memory is internally configured as an eight-bank DRAM. Each of the x16’s 134,217,728-bit banks is organized as 8192 rows by 1024 columns by 16 bits. Each of the x32’s 134,217,728-bit banks is organized as 8192 rows by 512 columns by 32 bits. It has multiplexed, double data rate, command/address inputs; commands entered on every CK edge. It has bidirectional/differential data strobe per byte of data (DQS/DQS#), programmable READ and WRITE latencies (RL/WL).

Documents

Technical documentation and resources