Discrete Semiconductor Products

IRFR110TRPBF

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 4.3A DPAK

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Discrete Semiconductor Products

IRFR110TRPBF

Active

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 4.3A DPAK

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR110TRPBF

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W, 2.5 W
Rds On (Max) @ Id, Vgs	540 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFR110 Series

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRFR110PBF-BE3	TO-252AA	8.3 nC	-55 °C	150 °C	Surface Mount	N-Channel	4.3 A	540 mOhm	100 V	MOSFET (Metal Oxide)	4 V	2.5 W 25 W	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	180 pF
Vishay General Semiconductor - Diodes Division IRFR110TRPBF	DPAK	8.3 nC	-55 °C	150 °C	Surface Mount	N-Channel	4.3 A	540 mOhm	100 V	MOSFET (Metal Oxide)	4 V	2.5 W 25 W	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	180 pF	10 V
Vishay General Semiconductor - Diodes Division IRFR110TRPBF-BE3	TO-252AA	8.3 nC	-55 °C	150 °C	Surface Mount	N-Channel	4.3 A	540 mOhm	100 V	MOSFET (Metal Oxide)	4 V	2.5 W 25 W	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	180 pF	10 V
Vishay General Semiconductor - Diodes Division IRFR110PBF	DPAK	8.3 nC	-55 °C	150 °C	Surface Mount	N-Channel	4.3 A	540 mOhm	100 V	MOSFET (Metal Oxide)	4 V	2.5 W 25 W	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	180 pF	10 V
Vishay General Semiconductor - Diodes Division IRFR110	DPAK	8.3 nC	-55 °C	150 °C	Surface Mount	N-Channel	4.3 A	540 mOhm	100 V	MOSFET (Metal Oxide)	4 V	2.5 W 25 W	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	180 pF	10 V
Vishay General Semiconductor - Diodes Division IRFR110TRLPBF-BE3	TO-252AA	8.3 nC	-55 °C	150 °C	Surface Mount	N-Channel	4.3 A	540 mOhm	100 V	MOSFET (Metal Oxide)	4 V	2.5 W 25 W	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	180 pF
Vishay General Semiconductor - Diodes Division IRFR110TRR	DPAK	8.3 nC	-55 °C	150 °C	Surface Mount	N-Channel	4.3 A	540 mOhm	100 V	MOSFET (Metal Oxide)	4 V	2.5 W 25 W	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	180 pF	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.96
		10	$ 0.79
		100	$ 0.61
		500	$ 0.52
		1000	$ 0.42
	Digi-Reel®	1	$ 0.96
		10	$ 0.79
		100	$ 0.61
		500	$ 0.52
		1000	$ 0.42
	Tape & Reel (TR)	2000	$ 0.40
		6000	$ 0.38
		10000	$ 0.36

Description

General part information

IRFR110 Series

N-Channel 100 V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount DPAK

Documents

Technical documentation and resources