IRFR110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 4.3A DPAK
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-252AA | 8.3 nC | -55 °C | 150 °C | Surface Mount | N-Channel | 4.3 A | 540 mOhm | 100 V | MOSFET (Metal Oxide) | 4 V | 2.5 W 25 W | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 180 pF | |
Vishay General Semiconductor - Diodes Division | DPAK | 8.3 nC | -55 °C | 150 °C | Surface Mount | N-Channel | 4.3 A | 540 mOhm | 100 V | MOSFET (Metal Oxide) | 4 V | 2.5 W 25 W | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 180 pF | 10 V |
Vishay General Semiconductor - Diodes Division | TO-252AA | 8.3 nC | -55 °C | 150 °C | Surface Mount | N-Channel | 4.3 A | 540 mOhm | 100 V | MOSFET (Metal Oxide) | 4 V | 2.5 W 25 W | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 180 pF | 10 V |
Vishay General Semiconductor - Diodes Division | DPAK | 8.3 nC | -55 °C | 150 °C | Surface Mount | N-Channel | 4.3 A | 540 mOhm | 100 V | MOSFET (Metal Oxide) | 4 V | 2.5 W 25 W | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 180 pF | 10 V |
Vishay General Semiconductor - Diodes Division | DPAK | 8.3 nC | -55 °C | 150 °C | Surface Mount | N-Channel | 4.3 A | 540 mOhm | 100 V | MOSFET (Metal Oxide) | 4 V | 2.5 W 25 W | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 180 pF | 10 V |
Vishay General Semiconductor - Diodes Division | TO-252AA | 8.3 nC | -55 °C | 150 °C | Surface Mount | N-Channel | 4.3 A | 540 mOhm | 100 V | MOSFET (Metal Oxide) | 4 V | 2.5 W 25 W | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 180 pF | |
Vishay General Semiconductor - Diodes Division | DPAK | 8.3 nC | -55 °C | 150 °C | Surface Mount | N-Channel | 4.3 A | 540 mOhm | 100 V | MOSFET (Metal Oxide) | 4 V | 2.5 W 25 W | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 180 pF | 10 V |