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2N6385
Discrete Semiconductor Products

JANTX2N6283

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Microchip Technology

DARLINGTON NPN SILICON POWER 80V TO 100V, 20A

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Search across all available documentation for this part.

2N6385
Discrete Semiconductor Products

JANTX2N6283

Active
Microchip Technology

DARLINGTON NPN SILICON POWER 80V TO 100V, 20A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N6283
Current - Collector (Ic) (Max)20 A
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce1500 hFE
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-3, TO-204AA
Power - Max [Max]175 W
QualificationMIL-PRF-19500/504
Supplier Device PackageTO-204AA (TO-3)
Vce Saturation (Max) @ Ib, Ic3 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 56.24
Microchip DirectN/A 1$ 60.56

Description

General part information

JANTX2N6283-Darlington Series

This specification covers the performance requirements for NPN silicon power Darlington, 2N6283 and 2N6284 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/504.

Documents

Technical documentation and resources