Discrete Semiconductor Products

SQM10250E_GE3

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MOSFET N-CH 250V 65A TO263

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Discrete Semiconductor Products

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MOSFET N-CH 250V 65A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SQM10250E_GE3

Current - Continuous Drain (Id) @ 25°C	65 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Qualification	Grade	FET Type	Mounting Type	Vgs (Max)	Technology	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SQM10250E_GE3	75 nC	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 mOhm	-55 °C	175 ░C	10 V	7.5 V	AEC-Q101	Automotive	N-Channel	Surface Mount	20 V	MOSFET (Metal Oxide)	375 W	65 A	250 V	3.5 V	4050 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 250 V 65A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources