SQM10250 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 250V 65A TO263
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Qualification | Grade | FET Type | Mounting Type | Vgs (Max) | Technology | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 75 nC | TO-263 (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 30 mOhm | -55 °C | 175 ░C | 10 V | 7.5 V | AEC-Q101 | Automotive | N-Channel | Surface Mount | 20 V | MOSFET (Metal Oxide) | 375 W | 65 A | 250 V | 3.5 V | 4050 pF |