Specification	KSC5338D

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	6
Frequency - Transition	11 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	75 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	450 V

KSC5338D Series

NPN Triple Diffused Planar Silicon Transistor

Part	Package / Case	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector (Ic) (Max)	Supplier Device Package	Frequency - Transition
ON Semiconductor KSC5338D	TO-220-3	75 W	100 µA	NPN	6	500 mV	150 °C	450 V	Through Hole	5 A	TO-220-3	11 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Triple Diffused Planar Silicon Transistor

Technical documentation and resources