Specification	NVE4153NT1G

Current - Continuous Drain (Id) @ 25°C	915 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.82 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-89, SOT-490
Power Dissipation (Max)	300 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	SC-89-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max) @ Id	1.1 V

NVE4153N Series

Single N−Channel Small Signal MOSFET with ESD Protection 20V, 915mA, 230mΩ

Part	Power Dissipation (Max)	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Grade	Vgs (Max)	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NVE4153NT1G	300 mW	MOSFET (Metal Oxide)	Surface Mount	110 pF	915 mA	20 V	1.82 nC	1.1 V	230 mOhm	SC-89-3	N-Channel	Automotive	6 V	AEC-Q101	1.5 V 4.5 V	SC-89 SOT-490	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.75
		10	$ 0.46
		100	$ 0.30
		500	$ 0.23
		1000	$ 0.21
	Digi-Reel®	1	$ 0.75
		10	$ 0.46
		100	$ 0.30
		500	$ 0.23
		1000	$ 0.21
	Tape & Reel (TR)	3000	$ 0.18
		6000	$ 0.16
		9000	$ 0.15
		15000	$ 0.15
		21000	$ 0.14
		30000	$ 0.14
Newark	Each (Supplied on Full Reel)	3000	$ 0.19
		6000	$ 0.17
		12000	$ 0.16
		18000	$ 0.15
		30000	$ 0.14
ON Semiconductor	N/A	1	$ 0.20

Description

General part information

NVE4153N Series

Automotive Power MOSFET ideal for low power applications. 20V 915mA 230mΩ Single N-Channel SC-89 with ESD Protection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.