No image
Discrete Semiconductor Products
DC35GN-15-D3
ActiveMicrochip Technology
RF POWER FIELD-EFFECT TRANSISTOR
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
Discrete Semiconductor Products
DC35GN-15-D3
ActiveMicrochip Technology
RF POWER FIELD-EFFECT TRANSISTOR
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | DC35GN-15-D3 |
|---|---|
| Current - Test | 60 mA |
| Frequency [Max] | 3.5 GHz |
| Frequency [Min] | 30 MHz |
| Gain | 18 dBi |
| Mounting Type | Surface Mount |
| Package / Case | 14-VDFN Exposed Pad |
| Power - Output | 15 W |
| Supplier Device Package | 14-DFN (3x6) |
| Technology | HEMT |
| Voltage - Rated | 65 V |
| Voltage - Test | 52 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 157.86 | |
| 5 | $ 135.85 | |||
| 10 | $ 119.15 | |||
| 25 | $ 106.25 | |||
| 50 | $ 97.15 | |||
| 100 | $ 89.55 | |||
| 250 | $ 84.24 | |||
| 500 | $ 81.21 | |||
| 1000 | $ 79.68 | |||
| 5000 | $ 78.93 | |||
Description
General part information
DC35GN-15-D3-Power-Transistor Series
The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz band. This transistor can be used for narrow or broadband pulsed or CW applications. Housed in a 3x6mm Plastic DFN SMT package and offering small size and weight.
Documents
Technical documentation and resources