Discrete Semiconductor Products
TIP121
ActiveSTMicroelectronics
LOW VOLTAGE NPN POWER DARLINGTON TRANSISTOR
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Search across all available documentation for this part.
Discrete Semiconductor Products
TIP121
ActiveSTMicroelectronics
LOW VOLTAGE NPN POWER DARLINGTON TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TIP121 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 5 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-220 |
| Vce Saturation (Max) @ Ib, Ic | 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TIP121 Series
The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Documents
Technical documentation and resources