Discrete Semiconductor Products

RW1A030APT2CR

Obsolete

MOSFET P-CH 12V 3A 6WEMT

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 3A 6WEMT

Technical Specifications

Parameters and characteristics for this part

Specification	RW1A030APT2CR

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2700 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	700 mW
Rds On (Max) @ Id, Vgs [Max]	42 mOhm
Supplier Device Package	6-WEMT
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-8 V
Vgs(th) (Max) @ Id	1 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	FET Type	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor RW1A030APT2CR	MOSFET (Metal Oxide)	3 A	-8 V	P-Channel	42 mOhm	1 V	Surface Mount	2700 pF	22 nC	700 mW	6-SMD Flat Leads	6-WEMT	12 V	150 °C	1.5 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

P-Channel 12 V 3A (Ta) 700mW (Ta) Surface Mount 6-WEMT

Technical documentation and resources