RW1A030 Series
Manufacturer: Rohm Semiconductor
MOSFET P-CH 12V 3A 6WEMT
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | FET Type | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | MOSFET (Metal Oxide) | 3 A | -8 V | P-Channel | 42 mOhm | 1 V | Surface Mount | 2700 pF | 22 nC | 700 mW | 6-SMD Flat Leads | 6-WEMT | 12 V | 150 °C | 1.5 V 4.5 V |