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STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

STB18N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 198 OHM TYP., 15 A MDMESH M5 POWER MOSFET IN A D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENProduct Change Notice EN+20
STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

STB18N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 198 OHM TYP., 15 A MDMESH M5 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

DocumentsTechnical Data Sheet ENProduct Change Notice EN+20

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB18N65M5
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1240 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)110 W
Rds On (Max) @ Id, Vgs220 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.12
10$ 2.42
100$ 1.87
500$ 1.52
Digi-Reel® 1$ 3.12
10$ 2.42
100$ 1.87
500$ 1.52
N/A 0$ 3.33
Tape & Reel (TR) 1000$ 1.34
2000$ 1.27
NewarkEach (Supplied on Cut Tape) 1$ 3.85
10$ 2.86
25$ 2.66
50$ 2.46
100$ 2.26
250$ 2.13
500$ 1.99
1000$ 1.90

Description

General part information

STB18 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.