Discrete Semiconductor Products

APT50N60JCCU2

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TRANS MOSFET N-CH 600V 50A 4-PIN SOT-227

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 600V 50A 4-PIN SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	APT50N60JCCU2

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	6800 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	290 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	SOT-227
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

600V/Boost chopper/Si MOSFET modules

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)
Microchip Technology APT50N60JCCU2	MOSFET (Metal Oxide)	150 nC	50 A	SOT-227-4 miniBLOC	3.9 V	45 mOhm	10 V	20 V	6800 pF	N-Channel	150 °C	-40 °C	Chassis Mount	600 V	SOT-227	290 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* Superjunction MOSFET

* Ultra low RDSon

* Low Miller capacitance

Technical documentation and resources