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Transistor MOSFET Array Dual P-CH 20V 0.83A 6-Pin SC-89 T/R
Discrete Semiconductor Products

FDY1002PZ

Active
ON Semiconductor

DUAL P-CHANNEL (-1.5 V) SPECIFIED POWERTRENCH<SUP>®</SUP> MOSFET -20V, -0.83A, 0.5Ω

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Search across all available documentation for this part.

DocumentsDatasheetTechnical Data Sheet EN+2
Transistor MOSFET Array Dual P-CH 20V 0.83A 6-Pin SC-89 T/R
Discrete Semiconductor Products

FDY1002PZ

Active
ON Semiconductor

DUAL P-CHANNEL (-1.5 V) SPECIFIED POWERTRENCH<SUP>®</SUP> MOSFET -20V, -0.83A, 0.5Ω

Deep-Dive with AI

DocumentsDatasheetTechnical Data Sheet EN+2

Technical Specifications

Parameters and characteristics for this part

SpecificationFDY1002PZ
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C830 mA
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]3.1 nC
Input Capacitance (Ciss) (Max) @ Vds135 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-666, SOT-563
Power - Max [Max]446 mW
Rds On (Max) @ Id, Vgs500 mOhm
Supplier Device PackageSOT-563F
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.54
10$ 0.46
100$ 0.32
500$ 0.25
1000$ 0.20
Digi-Reel® 1$ 0.54
10$ 0.46
100$ 0.32
500$ 0.25
1000$ 0.20
Tape & Reel (TR) 3000$ 0.18
6000$ 0.17
9000$ 0.16
30000$ 0.16
NewarkEach (Supplied on Cut Tape) 1$ 0.72
10$ 0.46
25$ 0.41
50$ 0.36
100$ 0.31
250$ 0.28
500$ 0.24
1000$ 0.22
ON SemiconductorN/A 1$ 0.16

Description

General part information

FDY1002PZ Series

This Dual P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(on)@VGS= –1.5 V.