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TO-247-3 HiP
Discrete Semiconductor Products

STGWT20H65FB

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STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP 650 V, 20 A HIGH SPEED HB SERIES IGBT

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TO-247-3 HiP
Discrete Semiconductor Products

STGWT20H65FB

Active
STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP 650 V, 20 A HIGH SPEED HB SERIES IGBT

Deep-Dive with AI

Documents+11

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWT20H65FB
Current - Collector (Ic) (Max) [Max]40 A
Current - Collector Pulsed (Icm)80 A
Gate Charge120 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Power - Max [Max]168 W
Supplier Device PackageTO-3P
Switching Energy170 µJ, 77 µJ
Td (on/off) @ 25°C139 ns, 30 ns
Test Condition20 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic [Max]2 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 548$ 3.45
Tube 1$ 1.85
30$ 1.49
120$ 1.23
510$ 1.11
MouserN/A 1$ 1.85
10$ 1.49
100$ 1.23
300$ 1.10

Description

General part information

STGWT20 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.