Discrete Semiconductor Products

SQS460CENW-T1_GE3

Active

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Technical Specifications

Parameters and characteristics for this part

Specification	SQS460CENW-T1_GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	580 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8W
Power Dissipation (Max)	27 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	PowerPAK® 1212-8W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Qualification	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Grade	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SQS460ENW-T1_GE3	20 V	2.5 V	36 mOhm	4.5 V 10 V	20 nC	755 pF	PowerPAK® 1212-8W	MOSFET (Metal Oxide)	AEC-Q101	Surface Mount	PowerPAK® 1212-8W	-55 °C	175 ░C	8 A	Automotive	N-Channel	39 W	60 V
Vishay General Semiconductor - Diodes Division SQS460CENW-T1_GE3	20 V	2.5 V	30 mOhm	4.5 V 10 V		580 pF	PowerPAK® 1212-8W	MOSFET (Metal Oxide)	AEC-Q101	Surface Mount	PowerPAK® 1212-8W	-55 °C	175 ░C	8 A	Automotive	N-Channel	27 W	60 V	11 nC
Vishay General Semiconductor - Diodes Division SQS460EN-T1_BE3	20 V	2.5 V	36 mOhm	4.5 V 10 V	20 nC	755 pF	PowerPAK® 1212-8	MOSFET (Metal Oxide)	AEC-Q101	Surface Mount	PowerPAK® 1212-8	-55 °C	175 ░C	8 A	Automotive	N-Channel	39 W	60 V
Vishay General Semiconductor - Diodes Division SQS460EN-T1_GE3	20 V	2.5 V	36 mOhm	4.5 V 10 V	20 nC	755 pF	PowerPAK® 1212-8	MOSFET (Metal Oxide)		Surface Mount	PowerPAK® 1212-8	-55 °C	175 ░C	8 A		N-Channel	39 W	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 8A (Tc) 27W (Tc) Surface Mount PowerPAK® 1212-8W

Technical documentation and resources