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SQS415ENW-T1_GE3
Discrete Semiconductor Products

SQS460ENW-T1_GE3

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SQS415ENW-T1_GE3
Discrete Semiconductor Products

SQS460ENW-T1_GE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQS460ENW-T1_GE3
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds755 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® 1212-8W
Power Dissipation (Max)39 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs36 mOhm
Supplier Device PackagePowerPAK® 1212-8W
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.09
10$ 0.73
100$ 0.56
500$ 0.46
1000$ 0.40
Digi-Reel® 1$ 1.09
10$ 0.73
100$ 0.56
500$ 0.46
1000$ 0.40
Tape & Reel (TR) 3000$ 0.35
6000$ 0.34
9000$ 0.33
15000$ 0.32

Description

General part information

SQS460 Series

N-Channel 60 V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8W

Documents

Technical documentation and resources