
Discrete Semiconductor Products
JANSR2N2369A
ActiveMicrochip Technology
RH SMALL-SIGNAL BJT TO-18 ROHS COMPLIANT: YES
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DocumentsProduct Change Notice EN

Discrete Semiconductor Products
JANSR2N2369A
ActiveMicrochip Technology
RH SMALL-SIGNAL BJT TO-18 ROHS COMPLIANT: YES
Deep-Dive with AI
DocumentsProduct Change Notice EN
Technical Specifications
Parameters and characteristics for this part
| Specification | JANSR2N2369A |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 400 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -65 ░C |
| Package / Case | TO-18-3 Metal Can, TO-206AA |
| Power - Max [Max] | 360 mW |
| Qualification | MIL-PRF-19500/317 |
| Supplier Device Package | TO-18 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 450 mV |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2N2369A Series
Bipolar (BJT) Transistor NPN 15 V 360 mW Through Hole TO-18
Documents
Technical documentation and resources