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STMICROELECTRONICS STB11N65M5
Discrete Semiconductor Products

STTH1512G-TR

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STMicroelectronics

FAST / ULTRAFAST DIODE, 1.2 KV, 15 A, SINGLE, 2.1 V, 105 NS, 200 A, TO-263 (D2PAK)

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STMICROELECTRONICS STB11N65M5
Discrete Semiconductor Products

STTH1512G-TR

Active
STMicroelectronics

FAST / ULTRAFAST DIODE, 1.2 KV, 15 A, SINGLE, 2.1 V, 105 NS, 200 A, TO-263 (D2PAK)

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH1512G-TR
Current - Average Rectified (Io)15 A
Current - Reverse Leakage @ Vr15 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)105 ns
Speed500 ns, 200 mA
Supplier Device PackageD2PAK
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1565$ 2.33
NewarkEach (Supplied on Cut Tape) 1$ 3.14
10$ 2.15
25$ 2.11
50$ 2.08
100$ 2.04
250$ 1.91
500$ 1.78
1000$ 1.66

Description

General part information

STTH1512 Series

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.