STB36N60M6
ActiveN-CHANNEL 600 V, 85 MOHM TYP., 30 A MDMESH M6 POWER MOSFET IN A D2PAK PACKAGE
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STB36N60M6
ActiveN-CHANNEL 600 V, 85 MOHM TYP., 30 A MDMESH M6 POWER MOSFET IN A D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB36N60M6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 44.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1960 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) [Max] | 208 W |
| Rds On (Max) @ Id, Vgs | 99 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB36N60M6 Series
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)* area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Documents
Technical documentation and resources