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8-TDFN
Discrete Semiconductor Products

NTMTS002N08MC

Active
ON Semiconductor

PTNG 80V IN CEBU PQFN88 FOR INDUSTRIAL MARKET/ REEL ROHS COMPLIANT: YES

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8-TDFN
Discrete Semiconductor Products

NTMTS002N08MC

Active
ON Semiconductor

PTNG 80V IN CEBU PQFN88 FOR INDUSTRIAL MARKET/ REEL ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMTS002N08MC
Current - Continuous Drain (Id) @ 25°C29 A
Current - Continuous Drain (Id) @ 25°C229 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs125 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max) [Max]3.3 W
Rds On (Max) @ Id, Vgs2 mOhm
Supplier Device Package8-DFNW
Supplier Device Package [x]8.3
Supplier Device Package [y]8.4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.89
10$ 4.66
100$ 3.39
500$ 2.90
Digi-Reel® 1$ 6.89
10$ 4.66
100$ 3.39
500$ 2.90
Tape & Reel (TR) 3000$ 2.90
NewarkEach 500$ 3.09
ON SemiconductorN/A 1$ 2.67

Description

General part information

NTMTS002N08MC Series

This N-Channel PTNG 80V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.