NTMTS002N08MC Series

Single N-Channel Power MOSFET 80V, 229A, 2.0mΩ, PQFN 8x8

Catalog

Single N-Channel Power MOSFET 80V, 229A, 2.0mΩ, PQFN 8x8

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor NTMTS002N08MC	125 nC	2 mOhm	8900 pF	6 V 10 V	8-PowerTDFN	N-Channel	20 V	4 V	Surface Mount	3.3 W	MOSFET (Metal Oxide)	29 A	229 A	8.3	8-DFNW	8.4	-55 °C	150 °C	80 V

Catalog

Single N-Channel Power MOSFET 80V, 229A, 2.0mΩ, PQFN 8x8

Key Features

• Very Low RDS(on), Shielded Gate Trench Technology

• Low Profile PQFN 8x8 package

• Maximum junction temperature of 175C

• RoHS Compliant

• Soft Body diode with low Qrr

Description

This N-Channel PTNG 80V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.