Discrete Semiconductor Products

APT102GA60L

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TRANS IGBT CHIP N-CH 600V 183A 3-PIN(3+TAB) TO-264

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Discrete Semiconductor Products

Active

TRANS IGBT CHIP N-CH 600V 183A 3-PIN(3+TAB) TO-264

Technical Specifications

Parameters and characteristics for this part

Specification	APT102GA60L

Current - Collector (Ic) (Max) [Max]	183 A
Current - Collector Pulsed (Icm)	307 A
Gate Charge	294 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	780 W
Supplier Device Package	TO-264 [L]
Switching Energy	1.614 mJ, 1.354 mJ
Td (on/off) @ 25°C	28 ns, 212 ns
Test Condition	400 V, 62 A, 4.7 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	IGBT Type	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Power - Max [Max]	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Supplier Device Package	Mounting Type	Switching Energy	Vce(on) (Max) @ Vge, Ic
Microchip Technology APT102GA60L	PT	294 nC	600 V	4.7 Ohm 15 V 62 A 400 V	780 W	307 A	183 A	TO-264-3 TO-264AA	-55 °C	150 °C	28 ns 212 ns	TO-264 [L]	Through Hole	1.354 mJ 1.614 mJ	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	40	$ 14.59

General part information

Fast switching with low EMI

Very Low Eoff for maximum effi ciency

Ultra low Cres for improved noise immunity

Technical documentation and resources

No documents available