Discrete Semiconductor Products

IRFPF50PBF

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MOSFET N-CH 900V 6.7A TO247-3

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Discrete Semiconductor Products

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MOSFET N-CH 900V 6.7A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFPF50PBF

Current - Continuous Drain (Id) @ 25°C	6.7 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division IRFPF50PBF	Through Hole	2900 pF	MOSFET (Metal Oxide)	N-Channel	20 V	TO-247-3	1.6 Ohm	-55 °C	150 °C	4 V	TO-247AC	190 W	10 V	900 V	200 nC	6.7 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 6.7A (Tc) 190W (Tc) Through Hole TO-247AC

Technical documentation and resources