IRFPF50 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 900V 6.7A TO247-3
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | FET Type | Vgs (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Through Hole | 2900 pF | MOSFET (Metal Oxide) | N-Channel | 20 V | TO-247-3 | 1.6 Ohm | -55 °C | 150 °C | 4 V | TO-247AC | 190 W | 10 V | 900 V | 200 nC | 6.7 A |