
Discrete Semiconductor Products
JAN1N6761UR-1
ActiveMicrochip Technology
DIODE SCHOTTKY 100V 1A DO213AB
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Discrete Semiconductor Products
JAN1N6761UR-1
ActiveMicrochip Technology
DIODE SCHOTTKY 100V 1A DO213AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN1N6761UR-1 |
|---|---|
| Capacitance @ Vr, F | 70 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Grade | Military |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-213AB, MELF (Glass) |
| Qualification | MIL-PRF-19500/586 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | DO-213AB (MELF, LL41) |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 380 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
1N6761-1-Schottky-Diode Series
This 1 Amp Schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1N5819-1 and 1N6761-1 for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-41 glass package.
Documents
Technical documentation and resources
No documents available