Discrete Semiconductor Products

SIHP17N80E-GE3

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MOSFET N-CH 800V 15A TO220AB

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Discrete Semiconductor Products

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MOSFET N-CH 800V 15A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP17N80E-GE3

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	122 nC
Input Capacitance (Ciss) (Max) @ Vds	2408 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHP17N80E-GE3	TO-220-3	290 mOhm	208 W	122 nC	15 A	10 V	30 V	MOSFET (Metal Oxide)	TO-220AB	800 V	Through Hole	2408 pF	-55 °C	150 °C	4 V	N-Channel
Vishay General Semiconductor - Diodes Division SIHP17N80AE-GE3	TO-220-3	290 mOhm		62 nC	15 A	10 V	30 V	MOSFET (Metal Oxide)	TO-220AB	800 V	Through Hole	1260 pF	-55 °C	150 °C	4 V	N-Channel	179 W
Vishay General Semiconductor - Diodes Division SIHP17N80E-BE3	TO-220-3	290 mOhm	208 W	122 nC	15 A	10 V	30 V	MOSFET (Metal Oxide)	TO-220AB	800 V	Through Hole	2408 pF	-55 °C	150 °C	4 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 15A (Tc) 208W (Tc) Through Hole TO-220AB

Technical documentation and resources