SIHP17 Series

Catalog

MOSFET N-CH 800V 15A TO220AB

Part	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHP17N80E-GE3	TO-220-3	290 mOhm	208 W	122 nC	15 A	10 V	30 V	MOSFET (Metal Oxide)	TO-220AB	800 V	Through Hole	2408 pF	-55 °C	150 °C	4 V	N-Channel
Vishay General Semiconductor - Diodes Division SIHP17N80AE-GE3	TO-220-3	290 mOhm		62 nC	15 A	10 V	30 V	MOSFET (Metal Oxide)	TO-220AB	800 V	Through Hole	1260 pF	-55 °C	150 °C	4 V	N-Channel	179 W
Vishay General Semiconductor - Diodes Division SIHP17N80E-BE3	TO-220-3	290 mOhm	208 W	122 nC	15 A	10 V	30 V	MOSFET (Metal Oxide)	TO-220AB	800 V	Through Hole	2408 pF	-55 °C	150 °C	4 V	N-Channel