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JAN--XXXX
Discrete Semiconductor Products

JAN1N4942/TR

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Microchip Technology

RECTIFIER DIODE 200V, 1A THROUGH HOLE A, AXIAL

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JAN--XXXX
Discrete Semiconductor Products

JAN1N4942/TR

Active
Microchip Technology

RECTIFIER DIODE 200V, 1A THROUGH HOLE A, AXIAL

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N4942/TR
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr1 µA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseA, Axial
QualificationMIL-PRF-19500/359
Reverse Recovery Time (trr)150 ns
Speed200 mA, 500 ns
Supplier Device PackageA, Axial
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 153$ 4.42
Microchip DirectN/A 1$ 4.76
NewarkEach 100$ 4.42
100$ 4.42
500$ 4.25
500$ 4.25

Description

General part information

JAN1N4942-Rectifier-Diode Series

This Series of industry recognized voidless, hermetically sealed fast recovery glass rectifiers are military qualified to MIL-PRF-19500/359 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a working peak reverse voltage selection from 200 to 600 Volts with a 1.0 amp current rating. They are very robust in hard-glass construction and also use an internal metallurgical bond identified as "Category 1" for high-reliability applications. These devices are similar in ratings to the 1N5615 through 1N5619 series where surface mount MELF package configurations are also available by adding a "US" suffix (see separate data sheets).

Documents

Technical documentation and resources