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NC7SZ332P6X
Discrete Semiconductor Products

BC857S

Obsolete
ON Semiconductor

PNP MULTI-CHIP GENERAL PURPOSE AMPLIFIER

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NC7SZ332P6X
Discrete Semiconductor Products

BC857S

Obsolete
ON Semiconductor

PNP MULTI-CHIP GENERAL PURPOSE AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationBC857S
Current - Collector (Ic) (Max) [Max]200 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce125 hFE
Frequency - Transition200 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]300 mW
Supplier Device PackageSC-88 (SC-70-6)
Transistor Type2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic650 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

BC857CDW1 Series

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.